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    <title>Push-Button Logic on the Nanoscale</title>
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    <description>Scientists at the Georgia Institute of Technology have created tiny logic circuits that can be used as the basis of nanometer-scale robotics and processors using a single material as both the button and the circuit.</description>
    <dc:date>2010-08-19T09:47:00Z</dc:date>
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    <title>Melting Upon Cooling</title>
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    <description>When infused with certain impurities, silicon can melt when cooled, giving rise to an easier way to purify silicon semiconductors.</description>
    <dc:date>2010-08-10T16:24:00Z</dc:date>
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    <title>Researchers Keep Eye on the Ball with STM</title>
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    <description>Scanning tunneling microscopy (STM) is employed to image individual &amp;ldquo;soccer ball&amp;rdquo; molecules (fullerenes) underneath an atomic layer of graphite.</description>
    <dc:date>2010-07-16T12:13:00Z</dc:date>
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    <description>Single-photon light sources that emit strictly one photon at a time, in a high repetition rate are&amp;nbsp;extremely important for&amp;nbsp;quantum information science. Although this &amp;ldquo;photon gun&amp;rdquo; is a simple concept, it is far from a trivial task.</description>
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    <description>Design and synthesis of new nanoparticle-based organic devices.</description>
    <dc:date>2010-06-15T16:43:00Z</dc:date>
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    <description>Organic semiconductor lasers can be used to detect tiny amounts of the vapors emitted by explosive devices.</description>
    <dc:date>2010-06-02T12:57:00Z</dc:date>
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    <description>Irish researchers have created a transistor structure without semiconductor junctions.&amp;nbsp;</description>
    <dc:date>2010-05-12T14:42:00Z</dc:date>
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    <title>Gallium Arsenide Infiltrates Nanoparticle Multilayers</title>
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    <description>Gallium arsenide is infiltrated for the first time within porous nanoparticle-based periodic multilayers to yield a new structure displaying finely tuned enhanced optical reflectance.</description>
    <dc:date>2010-05-12T14:37:00Z</dc:date>
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    <description>US and Lithuanian researchers have clarified important high carrier injection phenomena in nitride LEDs and FETs.</description>
    <dc:date>2010-05-05T13:19:00Z</dc:date>
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    <title>Venturing on dryer land: Chalcopyrite solar cells without a buffer layer</title>
    <link>http://www.materialsviews.com/details/news/689641/Venturing_on_dryer_land_Chalcopyrite_solar_cells_without_a_buffer_layer.html</link>
    <description>Partially reactive sputtering of Zn(O,S) shows potential for Cd-free thin film cells with chalcopyrite absorbers.</description>
    <dc:date>2010-04-30T09:51:00Z</dc:date>
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